RJH60D5BDPQ-E0#T2 Renesas
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Technische Details RJH60D5BDPQ-E0#T2 Renesas
Description: IGBT TRENCH 600V 75A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A, Supplier Device Package: TO-247, IGBT Type: Trench, Td (on/off) @ 25°C: 50ns/130ns, Switching Energy: 400µJ (on), 810µJ (off), Test Condition: 300V, 37A, 5Ohm, 15V, Gate Charge: 78 nC, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 200 W.
Weitere Produktangebote RJH60D5BDPQ-E0#T2
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RJH60D5BDPQ-E0#T2 | Hersteller : Renesas Electronics Corporation |
Description: IGBT TRENCH 600V 75A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A Supplier Device Package: TO-247 IGBT Type: Trench Td (on/off) @ 25°C: 50ns/130ns Switching Energy: 400µJ (on), 810µJ (off) Test Condition: 300V, 37A, 5Ohm, 15V Gate Charge: 78 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 200 W |
Produkt ist nicht verfügbar |
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| RJH60D5BDPQ-E0#T2 | Hersteller : Renesas Electronics |
 IGBT Transistors IGBT |
Produkt ist nicht verfügbar |