RJH60F3DPK-00#T0

RJH60F3DPK-00#T0 Renesas Electronics Corporation


rjh60f3dpk-datasheet Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 178.5 W
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Technische Details RJH60F3DPK-00#T0 Renesas Electronics Corporation

Description: IGBT TRENCH 600V 40A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 20A, Supplier Device Package: TO-3P, IGBT Type: Trench, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 178.5 W.

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RJH60F3DPK-00#T0 Hersteller : Renesas Electronics REN_r07ds0199ej_rjh60f3dpk_DST_20101201-1999319.pdf IGBT Transistors IGBT
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