RJH60F4DPK-00#T0

RJH60F4DPK-00#T0 Renesas Electronics Corporation


rjh60f4dpk-datasheet?language=en Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/85ns
Test Condition: 400V, 30A, 5Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 235.8 W
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Technische Details RJH60F4DPK-00#T0 Renesas Electronics Corporation

Description: IGBT TRENCH 600V 60A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A, Supplier Device Package: TO-3P, IGBT Type: Trench, Td (on/off) @ 25°C: 45ns/85ns, Test Condition: 400V, 30A, 5Ohm, 15V, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 235.8 W.

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RJH60F4DPK-00#T0 Hersteller : Renesas Electronics REN_r07ds0235ej_rjh60f4dpk_DST_20101117-1999261.pdf IGBT Transistors IGBT
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