RJH65T14DPQ-A0#T0 Renesas Electronics
auf Bestellung 575 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.61 EUR |
| 25+ | 4.45 EUR |
| 100+ | 3.89 EUR |
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Technische Details RJH65T14DPQ-A0#T0 Renesas Electronics
Description: IGBT TRENCH 650V 100A TO-247A, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 250 ns, Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A, Supplier Device Package: TO-247A, IGBT Type: Trench, Td (on/off) @ 25°C: 38ns/125ns, Switching Energy: 1.3mJ (on), 1.2mJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 80 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 250 W.
Weitere Produktangebote RJH65T14DPQ-A0#T0 nach Preis ab 3.90 EUR bis 9.73 EUR
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RJH65T14DPQ-A0#T0 | Hersteller : Renesas Electronics Corporation |
 Description: IGBT TRENCH 650V 100A TO-247APackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 250 ns Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A Supplier Device Package: TO-247A IGBT Type: Trench Td (on/off) @ 25°C: 38ns/125ns Switching Energy: 1.3mJ (on), 1.2mJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 250 W |
auf Bestellung 863 Stücke: Lieferzeit 10-14 Tag (e) |
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