RJK0301DPB-00#J0 Renesas Electronics America Inc
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 60A LFPAK
Packaging: Bulk
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Description: MOSFET N-CH 30V 60A LFPAK
Packaging: Bulk
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
auf Bestellung 29286 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 3.4 EUR |
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Technische Details RJK0301DPB-00#J0 Renesas Electronics America Inc
Description: MOSFET N-CH 30V 60A LFPAK, Packaging: Bulk, Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V, Power Dissipation (Max): 65W (Tc), Supplier Device Package: LFPAK, Part Status: Obsolete, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V.
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