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RJK0328DPB-01#J0

RJK0328DPB-01#J0 Renesas Electronics Corporation

rjk0328dpb-01-datasheet?language=en Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V
auf Bestellung 1572 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.77 EUR
10+ 4 EUR
100+ 3.23 EUR
500+ 2.88 EUR
1000+ 2.46 EUR
Mindestbestellmenge: 4
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Technische Details RJK0328DPB-01#J0 Renesas Electronics Corporation

Description: MOSFET N-CH 30V 60A LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: LFPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V.

Weitere Produktangebote RJK0328DPB-01#J0 nach Preis ab 3.27 EUR bis 5.23 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RJK0328DPB-01#J0 RJK0328DPB-01#J0 Hersteller : Renesas Electronics REN_r07ds0264ej0500_rjk0328dpb_DST_20110301-2930643.pdf MOSFET PowerMOSFET
auf Bestellung 940 Stücke:
Lieferzeit 287-291 Tag (e)
Anzahl Preis ohne MwSt
1+5.23 EUR
10+ 4.7 EUR
100+ 3.85 EUR
500+ 3.27 EUR
RJK0328DPB-01#J0 Hersteller : Renesas rjk0328dpb-01-datasheet?language=en sc100-5/POWER MOSFETS FOR GENERALSWITCHING RJK0328
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RJK0328DPB-01#J0 RJK0328DPB-01#J0 Hersteller : Renesas Electronics Corporation rjk0328dpb-01-datasheet?language=en Description: MOSFET N-CH 30V 60A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V
Produkt ist nicht verfügbar