auf Bestellung 3056 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.49 EUR |
| 10+ | 4.19 EUR |
| 25+ | 4.05 EUR |
| 100+ | 3.08 EUR |
| 500+ | 2.52 EUR |
| 1000+ | 2.34 EUR |
| 2500+ | 2.32 EUR |
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Produktbewertung abgeben
Technische Details RJK0328DPB-01#J0 Renesas Electronics
Description: MOSFET N-CH 30V 60A LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: LFPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V.
Weitere Produktangebote RJK0328DPB-01#J0 nach Preis ab 2.24 EUR bis 5.53 EUR
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RJK0328DPB-01#J0 | Hersteller : Renesas Electronics Corporation |
 Description: MOSFET N-CH 30V 60A LFPAKPackaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V |
auf Bestellung 3398 Stücke: Lieferzeit 10-14 Tag (e) |
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| RJK0328DPB-01#J0 | Hersteller : Renesas |
sc100-5/POWER MOSFETS FOR GENERALSWITCHING RJK0328 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RJK0328DPB-01#J0 | Hersteller : Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 60A LFPAK Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V |
Produkt ist nicht verfügbar |