| Anzahl | Preis |
|---|---|
| 1+ | 5.49 EUR |
| 10+ | 4.19 EUR |
| 25+ | 4.05 EUR |
| 100+ | 3.08 EUR |
| 500+ | 2.52 EUR |
| 1000+ | 2.34 EUR |
| 2500+ | 2.32 EUR |
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Technische Details RJK0328DPB-01#J0 Renesas Electronics
Description: MOSFET N-CH 30V 60A LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote RJK0328DPB-01#J0 nach Preis ab 2.24 EUR bis 5.53 EUR
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RJK0328DPB-01#J0 | Renesas Electronics Corporation |
 Description: MOSFET N-CH 30V 60A LFPAKInput Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
auf Bestellung 3398 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RJK0328DPB-01#J0 |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 60A LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
auf Bestellung 3398 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.53 EUR |
| 10+ | 3.81 EUR |
| 100+ | 2.77 EUR |
| 500+ | 2.32 EUR |
| 1000+ | 2.24 EUR |