RJK0348DPA-00#J0 Renesas Electronics America Inc

Description: POWER FIELD-EFFECT TRANSISTOR, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: 8-WPAK, Power Dissipation (Max): 55W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V.