RJK0364DPA-00#J0 Renesas Electronics America Inc

Description: MOSFET N-CH 30V 35A 8WPAK, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: 8-WPAK (3), Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 17.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Bulk.