RJK0660DPA-00#J5A

RJK0660DPA-00#J5A Renesas Electronics Corporation


rjk0660dpa-datasheet Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 40A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.51 EUR
6000+ 2.41 EUR
Mindestbestellmenge: 3000
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Technische Details RJK0660DPA-00#J5A Renesas Electronics Corporation

Description: MOSFET N-CH 60V 40A 8WPAK, Packaging: Tape & Reel (TR), Package / Case: 8-WFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V, Power Dissipation (Max): 65W (Tc), Supplier Device Package: 8-WPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V.

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RJK0660DPA-00#J5A RJK0660DPA-00#J5A Hersteller : Renesas Electronics REN_r07ds0346ej0300_rjk0660dpa_DST_20130409-2930870.pdf MOSFET Power MOSFET
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