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RJK1003DPP-E0#T2 Renesas


rjk1003dpp-e0-data-sheet?language=en&r=1342636 Hersteller: Renesas
Description: RJK1003DPP - N-CHANNEL MOSFET 10
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
auf Bestellung 3408 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
125+3.86 EUR
Mindestbestellmenge: 125
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Technische Details RJK1003DPP-E0#T2 Renesas

Description: RJK1003DPP - N-CHANNEL MOSFET 10, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V.

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RJK1003DPP-E0#T2 RJK1003DPP-E0#T2 Hersteller : Renesas Electronics r07ds0627ej0200_rjk1003dpp-1093105.pdf MOSFET Power MOSFET
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