RJK1576DPA-00#J5A

RJK1576DPA-00#J5A Renesas Electronics Corporation


rjk1576dpa-datasheet Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 150V 25A WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 12.5A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: WPAK(3F) (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.62 EUR
6000+ 2.51 EUR
Mindestbestellmenge: 3000
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Technische Details RJK1576DPA-00#J5A Renesas Electronics Corporation

Description: MOSFET N-CH 150V 25A WPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 58mOhm @ 12.5A, 10V, Power Dissipation (Max): 65W (Tc), Supplier Device Package: WPAK(3F) (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.

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RJK1576DPA-00#J5A RJK1576DPA-00#J5A Hersteller : Renesas Electronics rnccs12751_1-2291304.pdf MOSFET POWER MOSFET 150V 25A 58MOHM WPAK
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