RJK5015DPK-00#T0 Renesas

TO3P/NCH, VDSS 500V, ID(DC)25A,RDS(ON)MAX 0.24OHM RJK5015
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Technische Details RJK5015DPK-00#T0 Renesas
Description: MOSFET N-CHANNEL 500V 25A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 12.5A, 10V, Power Dissipation (Max): 150W (Ta), Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V.
Weitere Produktangebote RJK5015DPK-00#T0
Foto | Bezeichnung | Hersteller | Beschreibung |
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RJK5015DPK-00#T0 | Hersteller : Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 12.5A, 10V Power Dissipation (Max): 150W (Ta) Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
Produkt ist nicht verfügbar |
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RJK5015DPK-00#T0 | Hersteller : Renesas Electronics |
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Produkt ist nicht verfügbar |