RJK5015DPM-00#T1 RJK5015DPM-00#T1 RJK5015DPM-00#T1 RJK5015DPM-00#T1

Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 25A TO3PFM
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PFM

Hersteller: Renesas Electronics
MOSFET Power MOSFET