RJK5020DPK-00#T0

RJK5020DPK-00#T0 Renesas Electronics Corporation


rjk5020dpk-datasheet?language=en Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 118mOhm @ 20A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V
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Technische Details RJK5020DPK-00#T0 Renesas Electronics Corporation

Description: MOSFET N-CH 500V 40A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 118mOhm @ 20A, 10V, Power Dissipation (Max): 200W (Tc), Supplier Device Package: TO-3P, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V.

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RJK5020DPK-00#T0 RJK5020DPK-00#T0 Hersteller : Renesas Electronics RNCCS04051_1-2574691.pdf MOSFET Power MOSFET
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