RJK5035DPP-A0#T2 Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 600V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 29W (Ta)
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 2025 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.75 EUR |
| 25+ | 3.76 EUR |
| 100+ | 3.22 EUR |
| 500+ | 2.86 EUR |
| 1000+ | 2.45 EUR |
| 2000+ | 2.31 EUR |
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Technische Details RJK5035DPP-A0#T2 Renesas Electronics Corporation
Description: MOSFET N-CH 600V 5A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V, Power Dissipation (Max): 29W (Ta), Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V.
Weitere Produktangebote RJK5035DPP-A0#T2 nach Preis ab 3.38 EUR bis 6.97 EUR
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RJK5035DPP-A0#T2 | Hersteller : Renesas Electronics |
MOSFET POWER TRS1 HV-MOS TO220FP MOS AP5H POWER |
auf Bestellung 930 Stücke: Lieferzeit 14-28 Tag (e) |
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