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RJK6002DPD-00-J2


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Technische Details RJK6002DPD-00-J2

Description: MOSFET N-CH 600V 2A MP3A, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1A, 10V, Power Dissipation (Max): 30W (Tc), Supplier Device Package: MP-3A, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V.

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RJK6002DPD-00#J2 RJK6002DPD-00#J2 Hersteller : Renesas Electronics Corporation rjk6002dpd-datasheet Description: MOSFET N-CH 600V 2A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V
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RJK6002DPD-00#J2 RJK6002DPD-00#J2 Hersteller : Renesas Electronics rej03g1483_rjk6002dpdds-1093179.pdf MOSFET GENERIC Transistor
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