RJK6012DPE-00-J3
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Lieferzeit 21-28 Tag (e)
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Technische Details RJK6012DPE-00-J3
Description: MOSFET N-CH 600V 10A 4LDPAK, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LDPAK, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 920mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-83, Packaging: Tape & Reel (TR).
Weitere Produktangebote RJK6012DPE-00-J3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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RJK6012DPE-00#J3 | Renesas Electronics Corporation |
 Description: MOSFET N-CH 600V 10A 4LDPAKInput Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LDPAK Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 920mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-83 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RJK6012DPE-00#J3 | Renesas Electronics |
MOSFETs Nch Power MOSFET 600V 10A 920mohm TO-263 / D2PAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RJK6012DPE-00#J3 |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 10A 4LDPAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LDPAK
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-83
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 10A 4LDPAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LDPAK
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-83
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RJK6012DPE-00#J3 |
|
Hersteller: Renesas Electronics
MOSFETs Nch Power MOSFET 600V 10A 920mohm TO-263 / D2PAK
MOSFETs Nch Power MOSFET 600V 10A 920mohm TO-263 / D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH