RJL5014DPP-A0#T2 Renesas Electronics
auf Bestellung 575 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.94 EUR |
| 10+ | 6.67 EUR |
| 100+ | 5.40 EUR |
| 500+ | 4.79 EUR |
| 1000+ | 3.78 EUR |
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Technische Details RJL5014DPP-A0#T2 Renesas Electronics
Description: ABU / MOSFET HV, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V, Power Dissipation (Max): 35W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220FN, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V.
Weitere Produktangebote RJL5014DPP-A0#T2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RJL5014DPP-A0#T2 | Hersteller : Renesas Electronics Corporation |
 Description: ABU / MOSFET HVPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
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