RJL6012DPE-00#J3 Renesas Electronics America Inc

Description: MOSFET N-CH 600V 10A 4LDPAK, Packaging: Tube, Package / Case: SC-83, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V, Power Dissipation (Max): 100W (Tc), Supplier Device Package: LDPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.