RJP4301APP-M0#T2 Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: IGBT 430V TO220FL
Power - Max: 30 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Part Status: Active
Test Condition: 300V, 200A, 30Ohm, 26V
Td (on/off) @ 25°C: 50ns/100ns
Supplier Device Package: TO-220FL
Vce(on) (Max) @ Vge, Ic: 10V @ 26V, 200A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Technische Details RJP4301APP-M0#T2 Renesas Electronics Corporation
Description: IGBT 430V TO220FL, Power - Max: 30 W, Current - Collector Pulsed (Icm): 200 A, Voltage - Collector Emitter Breakdown (Max): 430 V, Part Status: Active, Test Condition: 300V, 200A, 30Ohm, 26V, Td (on/off) @ 25°C: 50ns/100ns, Supplier Device Package: TO-220FL, Vce(on) (Max) @ Vge, Ic: 10V @ 26V, 200A, Input Type: Standard, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote RJP4301APP-M0#T2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| RJP4301APP-M0#T2 | Renesas Electronics |
IGBT Transistors Strobe IGBT, 430V, TO-200FL, Lead Free |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RJP4301APP-M0#T2 |
|
Hersteller: Renesas Electronics
IGBT Transistors Strobe IGBT, 430V, TO-200FL, Lead Free
IGBT Transistors Strobe IGBT, 430V, TO-200FL, Lead Free
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH