RJP60D0DPP-M0#T2 Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: IGBT 600V 45A TO-220FL
Power - Max: 35 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 45 A
Gate Charge: 45 nC
Test Condition: 300V, 22A, 5Ohm, 15V
Td (on/off) @ 25°C: 35ns/90ns
Supplier Device Package: TO-220FL
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Technische Details RJP60D0DPP-M0#T2 Renesas Electronics Corporation
Description: IGBT 600V 45A TO-220FL, Power - Max: 35 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 45 A, Gate Charge: 45 nC, Test Condition: 300V, 22A, 5Ohm, 15V, Td (on/off) @ 25°C: 35ns/90ns, Supplier Device Package: TO-220FL, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A, Input Type: Standard, Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
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| RJP60D0DPP-M0#T2 | Renesas Electronics |
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Hersteller: Renesas Electronics
IGBT Transistors Power Module - Lead Free
IGBT Transistors Power Module - Lead Free
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Im Einkaufswagen
Stück im Wert von UAH
