auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.35 EUR |
| 25+ | 3.45 EUR |
| 100+ | 3.03 EUR |
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Technische Details RJP65T54DPM-A0#T2 Renesas Electronics
Description: IGBT TRENCH 650V 60A TO-3PFP, Packaging: Tube, Package / Case: SC-94, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A, Supplier Device Package: TO-3PFP, IGBT Type: Trench, Td (on/off) @ 25°C: 35ns/120ns, Switching Energy: 330µJ (on), 760µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 72 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 63.5 W.
Weitere Produktangebote RJP65T54DPM-A0#T2 nach Preis ab 8.62 EUR bis 18.11 EUR
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RJP65T54DPM-A0#T2 | Hersteller : Renesas Electronics Corporation |
 Description: IGBT TRENCH 650V 60A TO-3PFPPackaging: Tube Package / Case: SC-94 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A Supplier Device Package: TO-3PFP IGBT Type: Trench Td (on/off) @ 25°C: 35ns/120ns Switching Energy: 330µJ (on), 760µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 72 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 63.5 W |
auf Bestellung 683 Stücke: Lieferzeit 10-14 Tag (e) |
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