RJS6004TDPP-EJ#T2 Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: DIODE SCHOTT 600V 10A TO220FP-2L
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220FP-2L
Current - Average Rectified (Io): 10A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Bulk
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Technische Details RJS6004TDPP-EJ#T2 Renesas Electronics Corporation
Description: DIODE SCHOTT 600V 10A TO220FP-2L, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-220FP-2L, Current - Average Rectified (Io): 10A, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 15 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Bulk.
Weitere Produktangebote RJS6004TDPP-EJ#T2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| RJS6004TDPP-EJ#T2 | Renesas Electronics Corporation |
Description: DIODE SCHOTT 600V 10A TO220FP-2L Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220FP-2L Current - Average Rectified (Io): 10A Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 15 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| RJS6004TDPP-EJ#T2 | Renesas Electronics |
Diodes - General Purpose, Power, Switching SiC diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RJS6004TDPP-EJ#T2 |
|
Hersteller: Renesas Electronics Corporation
Description: DIODE SCHOTT 600V 10A TO220FP-2L
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220FP-2L
Current - Average Rectified (Io): 10A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE SCHOTT 600V 10A TO220FP-2L
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220FP-2L
Current - Average Rectified (Io): 10A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RJS6004TDPP-EJ#T2 |
|
Hersteller: Renesas Electronics
Diodes - General Purpose, Power, Switching SiC diode
Diodes - General Purpose, Power, Switching SiC diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH