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RJU002N06T106

RJU002N06T106 Rohm Semiconductor

RJU002N06.pdf
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 200mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RJU002N06T106 Rohm Semiconductor

Description: MOSFET N-CH 60V 200MA UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 200mA, 4.5V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: UMT3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 10 V.

Weitere Produktangebote RJU002N06T106 nach Preis ab 0.23 EUR bis 0.86 EUR

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RJU002N06T106 RJU002N06T106 Rohm Semiconductor RJU002N06.pdf Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 200mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 10 V
auf Bestellung 15357 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.86 EUR
40+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RJU002N06T106 RJU002N06.pdf
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RJU002N06 T106 ROHM SOT23/SOT323
auf Bestellung 2907 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RJU002N06T106 RJU002N06.pdf
RJU002N06T106
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 200mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 10 V
auf Bestellung 15357 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.86 EUR
40+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RJU002N06T106 RJU002N06.pdf
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RJU002N06 T106
Hersteller: ROHM
SOT23/SOT323
auf Bestellung 2907 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH