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RJU003N03T106

RJU003N03T106 Rohm Semiconductor

RJU003N03.pdf
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 300mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: UMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
21000+0.12 EUR
30000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details RJU003N03T106 Rohm Semiconductor

Description: MOSFET N-CH 30V 300MA UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 300mA, 4.5V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: UMT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V.

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RJU003N03T106 RJU003N03T106 Rohm Semiconductor RJU003N03.pdf Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 300mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: UMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
auf Bestellung 32196 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.74 EUR
47+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RJU003N03-T106
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RJU003N03 T106 ROHM 09+
auf Bestellung 149018 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RJU003N03T106 RJU003N03.pdf
RJU003N03T106
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 300mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: UMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
auf Bestellung 32196 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
47+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RJU003N03-T106
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RJU003N03 T106
Hersteller: ROHM
09+
auf Bestellung 149018 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH