RK7002AT116
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auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details RK7002AT116
Description: MOSFET N-CH 60V 300MA SST3, Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: SST3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 200mW (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote RK7002AT116
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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RK7002AT116 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 300MA SST3 Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: SST3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RK7002AT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SST3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 3nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RK7002AT116 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 300MA SST3
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: SST3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 300MA SST3
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: SST3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RK7002AT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 3nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH