auf Bestellung 7916 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1774+ | 0.08 EUR |
| 2071+ | 0.07 EUR |
| 2184+ | 0.06 EUR |
| 6000+ | 0.06 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RK7002BT116 Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA SST3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: SST3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V.
Weitere Produktangebote RK7002BT116
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| RK7002BT116 | Hersteller : ROHM |
 10+ SOT-23 |
auf Bestellung 297000 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
RK7002BT116 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 250MA SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: SST3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
RK7002BT116 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 250MA SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: SST3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V |
Produkt ist nicht verfügbar |