auf Bestellung 999000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6000+ | 0.042 EUR |
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Technische Details RL207G Yangjie Electronic Technology
Description: DIODE GEN PURP 1KV 2A DO15, Packaging: Tape & Box (TB), Package / Case: DO-204AC, DO-15, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 20pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-15, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Weitere Produktangebote RL207G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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RL207G | Hersteller : LUGUANG ELECTRONIC |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 2A; Ifsm: 70A; DO15; Ufmax: 1.1V; Ir: 5uA Case: DO15 Mounting: THT Max. off-state voltage: 1kV Type of diode: rectifying Max. forward voltage: 1.1V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 70A Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RL207G | Hersteller : SMC Diode Solutions |
Description: DIODE GEN PURP 1KV 2A DO15 Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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RL207G | Hersteller : LUGUANG ELECTRONIC |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 2A; Ifsm: 70A; DO15; Ufmax: 1.1V; Ir: 5uA Case: DO15 Mounting: THT Max. off-state voltage: 1kV Type of diode: rectifying Max. forward voltage: 1.1V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 70A Leakage current: 5µA |
Produkt ist nicht verfügbar |