RM1A4N150S6 Rectron USA
Hersteller: Rectron USA
Description: MOSFET N-CH 150V 1.4A SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
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Technische Details RM1A4N150S6 Rectron USA
Description: MOSFET N-CH 150V 1.4A SOT23-6, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: SOT-23-6, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.56W (Tc), Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR).