RM2333 Rectron USA
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 12V 6A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details RM2333 Rectron USA
Description: MOSFET P-CHANNEL 12V 6A SOT23, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).