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RM4N700S4

RM4N700S4 Rectron USA

rm4n700s4.pdf
Hersteller: Rectron USA
Description: MOSFET N-CH 700V 4A SOT223-2
Input Capacitance (Ciss) (Max) @ Vds: 304 pF @ 50 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.2W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-3
Packaging: Tape & Reel (TR)
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Technische Details RM4N700S4 Rectron USA

Description: MOSFET N-CH 700V 4A SOT223-2, Input Capacitance (Ciss) (Max) @ Vds: 304 pF @ 50 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-223-2, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5.2W (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-3, Packaging: Tape & Reel (TR).