RM50N30DN Rectron USA
Hersteller: Rectron USADescription: MOSFET N-CHANNEL 30V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 3.57W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
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Technische Details RM50N30DN Rectron USA
Description: MOSFET N-CHANNEL 30V 50A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V, Power Dissipation (Max): 3.57W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-DFN (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V.