RM50N60IP Rectron USA

Description: MOSFET N-CHANNEL 60V 50A TO251, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-251, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 80W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.