RM60P04Y Rectron USA
Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 60V 4A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23
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Technische Details RM60P04Y Rectron USA
Description: MOSFET P-CHANNEL 60V 4A SOT23, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.5W (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Supplier Device Package: SOT-23.