RMW200N03TB Rohm Semiconductor

Description: MOSFET N-CH 30V 20A 8PSOP, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 3W (Ta), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V.