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RN1104MFV,L3F

RN1104MFV,L3F Toshiba

RN1104MFV_datasheet_en_20210818-1627374.pdf
Hersteller: Toshiba
Digital Transistors 150mW TRANSISTOR
auf Bestellung 32664 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+0.2 EUR
22+0.13 EUR
100+0.058 EUR
1000+0.048 EUR
2500+0.046 EUR
8000+0.042 EUR
24000+0.037 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1104MFV,L3F Toshiba

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 47 kOhms, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: VESM, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN1104MFV,L3F nach Preis ab 0.054 EUR bis 0.25 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1104MFV,L3F RN1104MFV,L3F Hersteller : Toshiba Semiconductor and Storage RN110xMFV.pdf Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
auf Bestellung 7889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
113+0.16 EUR
182+0.097 EUR
500+0.07 EUR
1000+0.062 EUR
2000+0.054 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
RN1104MFV,L3F RN1104MFV,L3F Hersteller : Toshiba Semiconductor and Storage RN110xMFV.pdf Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH