| Anzahl | Privatkunde |
|---|---|
| 15+ | 0.24 EUR |
| 22+ | 0.15 EUR |
| 100+ | 0.069 EUR |
| 1000+ | 0.057 EUR |
| 2500+ | 0.055 EUR |
| 8000+ | 0.05 EUR |
| 24000+ | 0.044 EUR |
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Technische Details RN1104MFV,L3F Toshiba
Description: TRANS PREBIAS NPN 50V 0.1A VESM, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 47 kOhms, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: VESM, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN1104MFV,L3F nach Preis ab 0.064 EUR bis 0.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RN1104MFV,L3F | Toshiba Semiconductor and Storage |
 Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Cut Tape (CT) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 |
auf Bestellung 7889 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RN1104MFV,L3F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
auf Bestellung 7889 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 0.3 EUR |
| 113+ | 0.19 EUR |
| 182+ | 0.12 EUR |
| 500+ | 0.083 EUR |
| 1000+ | 0.074 EUR |
| 2000+ | 0.064 EUR |