RN1106ACT(TPL3) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 80 mA
Supplier Device Package: CST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
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Technische Details RN1106ACT(TPL3) Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 4.7 kOhms, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 80 mA, Supplier Device Package: CST3, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA.
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RN1106ACT(TPL3) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.08A CST3 Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 80 mA Supplier Device Package: CST3 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA |
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