RN1107ACT(TPL3) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 80 mA
Part Status: Active
Supplier Device Package: CST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
| Anzahl | Privatkunde |
|---|---|
| 35+ | 0.61 EUR |
| 56+ | 0.38 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.14 EUR |
| 5000+ | 0.12 EUR |
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Technische Details RN1107ACT(TPL3) Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 10 kOhms, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 80 mA, Part Status: Active, Supplier Device Package: CST3, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN1107ACT(TPL3) nach Preis ab 0.15 EUR bis 0.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| RN1107ACT(TPL3) | Toshiba | RN1107ACT(TPL3) |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| RN1107ACT(TPL3) |
Hersteller: Toshiba
RN1107ACT(TPL3)
RN1107ACT(TPL3)
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4190+ | 0.15 EUR |