RN1111,LXHF(CT Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Tape & Reel (TR)
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Resistors Included: R1 Only
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 3000+ | 0.099 EUR |
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Technische Details RN1111,LXHF(CT Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 250 MHz, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Packaging: Tape & Reel (TR), Grade: Automotive, Supplier Device Package: SSM, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Resistors Included: R1 Only, Qualification: AEC-Q101.
Weitere Produktangebote RN1111,LXHF(CT nach Preis ab 0.095 EUR bis 0.48 EUR
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RN1111,LXHF(CT | Hersteller : Toshiba |
Digital Transistors AUTO AEC-Q Single NPN Q1BSR=10kO, VCEO=50V, IC=0.1A (SOT-416) |
auf Bestellung 10702 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1111,LXHF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMResistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Packaging: Cut Tape (CT) Resistors Included: R1 Only Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SSM DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 |
auf Bestellung 5470 Stücke: Lieferzeit 10-14 Tag (e) |
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