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RN1132MFV,L3F

RN1132MFV,L3F Toshiba Semiconductor and Storage

docget.jsp?did=727&prodName=RN1132MFV
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 200 kOhms
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
77+0.27 EUR
120+0.18 EUR
193+0.11 EUR
500+0.079 EUR
1000+0.069 EUR
2000+0.061 EUR
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Technische Details RN1132MFV,L3F Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 200 kOhms.

Weitere Produktangebote RN1132MFV,L3F

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RN1132MFV,L3F RN1132MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=727&prodName=RN1132MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 200 kOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1132MFV,L3F RN1132MFV,L3F Toshiba 71BEF63C9DCF4F8A85A7E6F2F00E2468EB5A202C62FD8BBB4188404A9FE704E7.pdf Digital Transistors Bias Resistor NPN .1A 50V 200kohm
Produkt ist nicht verfügbar
 Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1132MFV,L3F docget.jsp?did=727&prodName=RN1132MFV
RN1132MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 200 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1132MFV,L3F 71BEF63C9DCF4F8A85A7E6F2F00E2468EB5A202C62FD8BBB4188404A9FE704E7.pdf
RN1132MFV,L3F
Hersteller: Toshiba
Digital Transistors Bias Resistor NPN .1A 50V 200kohm
Produkt ist nicht verfügbar
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH