RN1305,LF

RN1305,LF Toshiba Semiconductor and Storage


docget.jsp?did=18776&prodName=RN1302 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 2175 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
39+0.46 EUR
47+ 0.37 EUR
100+ 0.2 EUR
500+ 0.13 EUR
1000+ 0.089 EUR
Mindestbestellmenge: 39
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Technische Details RN1305,LF Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A USM, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: SC-70, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote RN1305,LF nach Preis ab 0.078 EUR bis 0.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN1305,LF RN1305,LF Hersteller : Toshiba RN1305_datasheet_en_20210824-1916004.pdf Digital Transistors USM PLN TRANSISTOR Pd=100mW F=1MHz
auf Bestellung 2950 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
80+0.65 EUR
119+ 0.44 EUR
286+ 0.18 EUR
1000+ 0.12 EUR
3000+ 0.099 EUR
9000+ 0.083 EUR
24000+ 0.078 EUR
Mindestbestellmenge: 80
RN1305,LF RN1305,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1302 Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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