RN1310,LXHF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
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Technische Details RN1310,LXHF Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 250 MHz, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SC-70, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased.
Weitere Produktangebote RN1310,LXHF nach Preis ab 0.076 EUR bis 0.58 EUR
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RN1310,LXHF | Toshiba |
Digital Transistors AUTO AEC-Q NPN BRT, 4.7kO, 50V, 0.1A (SOT-323) |
auf Bestellung 8880 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1310,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RN1310,LXHF |
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Hersteller: Toshiba
Digital Transistors AUTO AEC-Q NPN BRT, 4.7kO, 50V, 0.1A (SOT-323)
Digital Transistors AUTO AEC-Q NPN BRT, 4.7kO, 50V, 0.1A (SOT-323)
auf Bestellung 8880 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.47 EUR |
| 10+ | 0.42 EUR |
| 100+ | 0.21 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.09 EUR |
| 9000+ | 0.076 EUR |
| RN1310,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |


