auf Bestellung 5683 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 0.22 EUR |
| 20+ | 0.14 EUR |
| 100+ | 0.063 EUR |
| 3000+ | 0.051 EUR |
| 9000+ | 0.035 EUR |
| 24000+ | 0.033 EUR |
| 45000+ | 0.03 EUR |
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Technische Details RN1407,LF Toshiba
Description: TRANS PREBIAS NPN 50V SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: S-Mini, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote RN1407,LF nach Preis ab 0.074 EUR bis 0.26 EUR
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RN1407,LF | Hersteller : Toshiba Semiconductor and Storage |
 Description: TRANS PREBIAS NPN 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 563 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1407,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |