Produkte > TOSHIBA > RN1407,LF
RN1407,LF

RN1407,LF Toshiba


RN1407_datasheet_en_20210830-1889816.pdf
Hersteller: Toshiba
Digital Transistors 10kohm /47kohm 50V 0.1A TO-236MOD
auf Bestellung 5683 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+0.22 EUR
20+0.14 EUR
100+0.063 EUR
3000+0.051 EUR
9000+0.035 EUR
24000+0.033 EUR
45000+0.03 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details RN1407,LF Toshiba

Description: TRANS PREBIAS NPN 50V SMINI, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: S-Mini, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN1407,LF nach Preis ab 0.074 EUR bis 0.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1407,LF RN1407,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18789&prodName=RN1409 Description: TRANS PREBIAS NPN 50V SMINI
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 563 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
107+0.17 EUR
173+0.1 EUR
500+0.074 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
RN1407,LF RN1407,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18789&prodName=RN1409 Description: TRANS PREBIAS NPN 50V SMINI
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH