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RN1703,LF

RN1703,LF Toshiba

3435354436453034343235323044304635413334393234393745443334363135.pdf Hersteller: Toshiba
Digital Transistors NPN x 2 BRT, Q1BSR=22kOhm, Q1BER=22kOhm, Q2BSR=22kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A
auf Bestellung 8309 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.36 EUR
13+0.22 EUR
100+0.14 EUR
500+0.1 EUR
1000+0.092 EUR
3000+0.081 EUR
6000+0.07 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1703,LF Toshiba

Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH, Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: USV.

Weitere Produktangebote RN1703,LF nach Preis ab 0.089 EUR bis 0.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1703,LF RN1703,LF Hersteller : Toshiba Semiconductor and Storage Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
56+0.32 EUR
115+0.15 EUR
500+0.13 EUR
1000+0.089 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
RN1703,LF RN1703,LF Hersteller : Toshiba Semiconductor and Storage Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH