Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN1704,LF
RN1704,LF

RN1704,LF Toshiba Semiconductor and Storage

RN1704_datasheet_en_20191003.pdf?did=18817&prodName=RN1704 Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR47KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Part Status: Active
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
100+ 0.26 EUR
Mindestbestellmenge: 38
Produktrezensionen
Produktbewertung abgeben

Technische Details RN1704,LF Toshiba Semiconductor and Storage

Description: NPNX2 BRT Q1BSR47KOHM Q1BER47KOH, Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: USV, Part Status: Active.

Weitere Produktangebote RN1704,LF nach Preis ab 0.086 EUR bis 0.7 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN1704,LF RN1704,LF Hersteller : Toshiba RN1704_datasheet_en_20191003-1627345.pdf Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=47kOhm, Q1BER=47kOhm, Q2BSR=47kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
auf Bestellung 8099 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
75+0.7 EUR
108+ 0.48 EUR
264+ 0.2 EUR
1000+ 0.15 EUR
3000+ 0.12 EUR
9000+ 0.088 EUR
24000+ 0.086 EUR
Mindestbestellmenge: 75
RN1704,LF RN1704,LF Hersteller : Toshiba Semiconductor and Storage RN1704_datasheet_en_20191003.pdf?did=18817&prodName=RN1704 Description: NPNX2 BRT Q1BSR47KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Part Status: Active
Produkt ist nicht verfügbar