Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN1706,LF
RN1706,LF

RN1706,LF Toshiba Semiconductor and Storage

Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.08 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details RN1706,LF Toshiba Semiconductor and Storage

Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO, Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: USV, Part Status: Active.

Weitere Produktangebote RN1706,LF nach Preis ab 0.096 EUR bis 0.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN1706,LF RN1706,LF Hersteller : Toshiba Semiconductor and Storage Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Part Status: Active
auf Bestellung 6585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
55+ 0.41 EUR
111+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 38
RN1706,LF RN1706,LF Hersteller : Toshiba RN1706_datasheet_en_20191003-1627381.pdf Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=4.7kOhm, Q1BER=47kOhm, Q2BSR=4.7kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
auf Bestellung 8240 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
69+0.76 EUR
85+ 0.61 EUR
160+ 0.32 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
3000+ 0.11 EUR
9000+ 0.096 EUR
Mindestbestellmenge: 69