Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN1907,LXHF(CT
RN1907,LXHF(CT

RN1907,LXHF(CT Toshiba Semiconductor and Storage

docget.jsp?did=18826&prodName=RN1908
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details RN1907,LXHF(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS 2NPN 50V 100MA US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: US6, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote RN1907,LXHF(CT nach Preis ab 0.19 EUR bis 0.96 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN1907,LXHF(CT RN1907,LXHF(CT Toshiba 3438303332393441383830374636414430394637353638434443334132323637.pdf Digital Transistors AUTO AEC-Q 2-in-1 (Point-Sym) NPN x 2 , R1=10kOhm, R2=47kOhm, VCEO=50V, IC=0.1A (SOT-363)
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.95 EUR
10+0.58 EUR
100+0.37 EUR
500+0.27 EUR
1000+0.25 EUR
3000+0.21 EUR
6000+0.19 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1907,LXHF(CT RN1907,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18826&prodName=RN1908 Description: TRANS PREBIAS 2NPN 50V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5632 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
36+0.6 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.25 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1907,LXHF(CT 3438303332393441383830374636414430394637353638434443334132323637.pdf
RN1907,LXHF(CT
Hersteller: Toshiba
Digital Transistors AUTO AEC-Q 2-in-1 (Point-Sym) NPN x 2 , R1=10kOhm, R2=47kOhm, VCEO=50V, IC=0.1A (SOT-363)
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+0.95 EUR
10+0.58 EUR
100+0.37 EUR
500+0.27 EUR
1000+0.25 EUR
3000+0.21 EUR
6000+0.19 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1907,LXHF(CT docget.jsp?did=18826&prodName=RN1908
RN1907,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5632 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
36+0.6 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.25 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH