RN1910FE,LXHF(CT Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Technische Details RN1910FE,LXHF(CT Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: ES6, Resistor - Base (R1): 4.7kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN1910FE,LXHF(CT nach Preis ab 0.13 EUR bis 0.73 EUR
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RN1910FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETRQualification: AEC-Q101 Grade: Automotive Supplier Device Package: ES6 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1910FE,LXHF(CT | Toshiba |
Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN x 2 Q1BSR=4.7kO, VCEO=50V, IC=0.1A (SOT-563) |
auf Bestellung 7964 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RN1910FE,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 0.57 EUR |
| RN1910FE,LXHF(CT |
![]() |
Hersteller: Toshiba
Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN x 2 Q1BSR=4.7kO, VCEO=50V, IC=0.1A (SOT-563)
Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN x 2 Q1BSR=4.7kO, VCEO=50V, IC=0.1A (SOT-563)
auf Bestellung 7964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.73 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.21 EUR |
| 2000+ | 0.19 EUR |
| 4000+ | 0.13 EUR |


