RN1911,LXHF(CT Toshiba Semiconductor and Storage


datasheet_en_20211223.pdf?did=18828
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=1
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1911,LXHF(CT Toshiba Semiconductor and Storage

Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=1, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: US6.

Weitere Produktangebote RN1911,LXHF(CT nach Preis ab 0.17 EUR bis 0.9 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN1911,LXHF(CT RN1911,LXHF(CT Toshiba Semiconductor and Storage datasheet_en_20211223.pdf?did=18828 Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=1
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.65 EUR
41+0.51 EUR
100+0.31 EUR
500+0.29 EUR
1000+0.19 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1911,LXHF(CT RN1911,LXHF(CT Toshiba datasheet_en_20211223.pdf?did=18828 Digital Transistors AUTO AEC-Q TR NPNx2 BRT, 10kOhm 10kOhm 50V 0.1A (SOT-363)
auf Bestellung 2943 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.9 EUR
100+0.71 EUR
500+0.44 EUR
1000+0.33 EUR
3000+0.2 EUR
6000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1911,LXHF(CT datasheet_en_20211223.pdf?did=18828
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=1
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
41+0.51 EUR
100+0.31 EUR
500+0.29 EUR
1000+0.19 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1911,LXHF(CT datasheet_en_20211223.pdf?did=18828
Hersteller: Toshiba
Digital Transistors AUTO AEC-Q TR NPNx2 BRT, 10kOhm 10kOhm 50V 0.1A (SOT-363)
auf Bestellung 2943 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+0.9 EUR
100+0.71 EUR
500+0.44 EUR
1000+0.33 EUR
3000+0.2 EUR
6000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH