RN1963(TE85L,F)

RN1963(TE85L,F) Toshiba Semiconductor and Storage


RN1961_datasheet_en_20191118.pdf?did=18830&prodName=RN1961
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1963(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS 2NPN PREBIAS 0.2W US6, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 200mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Supplier Device Package: US6, Resistor - Emitter Base (R2): 22kOhms, Resistor - Base (R1): 22kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V.

Weitere Produktangebote RN1963(TE85L,F) nach Preis ab 0.18 EUR bis 0.83 EUR

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RN1963(TE85L,F) RN1963(TE85L,F) Hersteller : Toshiba Semiconductor and Storage RN1961_datasheet_en_20191118.pdf?did=18830&prodName=RN1961 Description: TRANS 2NPN PREBIAS 0.2W US6
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
29+0.61 EUR
100+0.35 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
RN1963(TE85L,F) RN1963(TE85L,F) Hersteller : Toshiba RN1963_datasheet_en_20191118-1609066.pdf Digital Transistors US6 PLN (LF) TRANSISTOR Pd=200mW F=250MHz
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Im Einkaufswagen  Stück im Wert von  UAH